Semiconductor Device and Method

ABSTRACT

A representative method for manufacturing fin field-effect transistors (FinFETs) includes steps of forming a plurality of fin structures over a substrate, and forming a plurality of isolation structures interposed between adjacent pairs of fin structures. Upper portions of the fin and isolation structures are etched. Epitaxial structures are formed over respective fin structures, with each of the epitaxial structures adjoining adjacent epitaxial structures. A dielectric layer is deposited over the plurality of epitaxial structures with void regions formed in the dielectric layer. The void regions are interposed between adjacent pairs of fin structures.

PRIORITY CLAIM AND CROSS-REFERENCE

This application claims priority to and the benefit of U.S. ProvisionalApplication No. 62/370,584, filed on 3 Aug. 2016, entitled “DIFFERENTIALSOURCE/DRAIN EPITAXIAL STRUCTURES AND METHODS OF FORMING SAME,” and U.S.Provisional Application No. 62/405,787, filed on 7 Oct. 2016, entitled“SEMICONDUCTOR DEVICE AND METHOD,” both of which applications are herebyincorporated herein by reference.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as, for example, personal computers, cell phones, digital cameras,and other electronic equipment. Semiconductor devices are typicallyfabricated by sequentially depositing insulating layers, conductivelayers, and semiconductive layers of material over a semiconductorsubstrate. The various material layers are patterned using lithographyto form circuit components and elements thereon.

The semiconductor industry continues to improve integration density ofvarious electronic components (e.g., transistors, diodes, resistors,capacitors, etc.) by continual reductions in minimum feature size, whichallow more components to be integrated into a given area.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofillustration or discussion.

FIG. 1 illustrates a representative intermediate structure in a processof forming a fin field-effect transistor (FinFET) device, in accordancewith some embodiments.

FIG. 2 representatively illustrates formation of source/drain regions,in accordance with some embodiments.

FIGS. 2A and 2B illustrate cross-section views of the structureillustrated in FIG. 2, in accordance with some embodiments.

FIGS. 3A-3C illustrates elevation views along the A-A′ cross-sectionrepresentatively illustrating formation of a first opening, inaccordance with some embodiments.

FIG. 4 is an elevation view along the A-A′ cross-sectionrepresentatively illustrating formation of a second opening in a firstsource/drain contact feature, in accordance with some embodiments.

FIG. 5 is an elevation view along the A-A′ cross-sectionrepresentatively illustrating formation of a second source/drain contactfeature, in accordance with some embodiments.

FIGS. 6, 7 and 8 are elevation views along the B-B′ cross-sectionrepresentatively illustrating formation of epitaxial source/drainregions, in accordance with some embodiments.

FIG. 9 is an elevation view along the B-B′ cross-sectionrepresentatively illustrated in FIG. 2, in accordance with someembodiments.

FIGS. 10-18 are elevation views along the B-B′ cross-sectionrepresentatively illustrating formation of epitaxial source/drainregions, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

FIG. 1 representatively illustrates a perspective view of asemiconductor device 100 such as a fin field-effect transistor (FinFET)device. In an embodiment, semiconductor device 100 comprises substrate101 with first trenches 103 formed therein. Substrate 101 may be asilicon substrate, although other substrates, such assemiconductor-on-insulator (SOI), strained SOI, and silicon germanium oninsulator, could be used. Substrate 101 may be a p-type semiconductor,although in other embodiments, it could be an n-type semiconductor.

First trenches 103 may be formed as an initial step in eventualformation of first isolation regions 105. First trenches 103 may beformed using a masking layer (not separately illustrated in FIG. 1)along with a suitable etching process. For example, the masking layermay be a hardmask comprising silicon nitride formed through a processsuch as chemical vapor deposition (CVD), although other materials, suchas oxides, oxynitrides, silicon carbide, combinations of these, or thelike, and other processes, such as plasma enhanced chemical vapordeposition (PECVD), low pressure chemical vapor deposition (LPCVD), oreven silicon oxide formation followed by nitridation, may be utilized.Once formed, the masking layer may be patterned through a suitablephotolithographic process to expose those portions of substrate 101 thatwill be removed to form first trenches 103.

As one of skill in the art will appreciate, however, the processes andmaterials described above to form the masking layer are not the onlymethods that may be used to protect portions of substrate 101 whileexposing other portions of substrate 101 for the formation of the firsttrenches 103. Any suitable process, such as a patterned and developedphotoresist, may be utilized to process portions of substrate 101 toform first trenches 103. All such methods are included in the scope ofrepresentative embodiments described herein.

Once a masking layer has been formed and patterned, first trenches 103are formed in substrate 101. Exposed substrate 101 portions may beremoved through a suitable process, such as reactive ion etching (RIE),in order to form first trenches 103 in substrate 101, although anysuitable process may be used. In an embodiment, first trenches 103 maybe formed to have a depth of less than about 5,000 Å from the surface ofthe substrate 101, such as about 2,500 Å.

However, as one of ordinary skill in the art will appreciate, processesdescribed above to form first trenches 103 are merely representativeexamples. Any suitable process by which first trenches 103 may be formedmay be alternatively, conjunctively, or sequentially utilized. Anysuitable process, including any number of masking and removal steps, maybe used.

Additionally, if desired, intra-fin first trenches (those first trenches103 located between adjacent ones of the fins 107 which share a commongate) may be formed to have a smaller depth than inter-fin firsttrenches 103 (those first trenches 103 located outside of adjacent onesof the fins 107 which share a common gate). For example, fins 107 whichwill be used to form PFET devices may utilize both inter-fin firsttrenches 103 and intra-fin first trenches 103 that have a similar depth,while fins 107 which will be used to form NFET devices may utilizedinter-fin first trenches 103 which a smaller depth than intra-fin firsttrenches 103. However, any suitable combination may be utilized.

In addition to forming first trenches 103, masking and etching processesadditionally form fins 107 from portions of substrate 101 that remainafter processing. For convenience, fins 107 have been illustrated in theFigures as being separated from substrate 101 by a dashed line, althougha physical indication of the separation may or may not be present. Fins107 may be used, as discussed later herein, to form channel regions ofmultiple-gate FinFET transistors. While FIG. 1 representativelyillustrates three fins 107 formed from substrate 101, any number of fins107 may be utilized.

Fins 107 may be formed such that they have a width at a surface ofsubstrate 101 of between about 5 nm and about 80 nm, such as about 30nm. Additionally, fins 107 may be spaced apart from each other by adistance of between about 10 nm and about 100 nm, such as about 50 nm.By spacing fins 107 in such a fashion, fins 107 may each form asubstantially separate channel region while still being close enough toshare a common gate.

Once first trenches 103 and fins 107 have been formed, first trenches103 may be filled with a dielectric material, and the dielectricmaterial may be recessed within first trenches 103 to form firstisolation regions 105. The dielectric material may be an oxide material,a high-density plasma (HDP) oxide, or the like. The dielectric materialmay be formed, after an optional cleaning and lining of first trenches103, using either a chemical vapor deposition (CVD) method (e.g., a HARPprocess), a high-density plasma CVD method, or other suitable method offormation, as known in the art.

First trenches 103 may be filled by overfilling first trenches 103 andsubstrate 101 with the dielectric material and then removing excessmaterial outside of first trenches 103 and fins 107, e.g., through asuitable process such as chemical mechanical polishing (CMP), an etch, acombination of these, or the like. In an embodiment, the removal processeliminates dielectric material that is located over fins 107 as well, sothat removal of the dielectric material will expose a surface of fins107 for subsequent processing.

Once first trenches 103 have been filled with dielectric material, thedielectric material may then be recessed away from the surface of fins107. Recession may be performed to expose at least a portion ofsidewalls of fins 107 adjacent to a top surface of fins 107. Thedielectric material may be recessed, e.g., using a plasma etching whichutilizes a plasma from a one or more etchants including CH₄, CF₄, CH₂F₂,CHF₃, O₂, HBr, Cl₂, NF₃, N₂ and/or He. The recessing may be performed ata pressure of between about 3 mTorr to about 20 mTorr and a temperatureof between about 30° C. and about 80° C., although any suitabletemperature and pressure may be utilized. However, other removalmethods, such as wet etching using an etchant such as HF, or H₂, a dryetch with etchants such as NH₃/NF₃, chemical oxide removal, or drychemical clean may be alternatively, conjunctively, or sequentiallyemployed. The dielectric material may be recessed to a distance from thesurface of fins 107 of between about 50 Å and about 500 Å, such as about400 Å. Additionally, the recessing may also remove leftover dielectricmaterial located over fins 107 to ensure that fins 107 are exposed forfurther processing.

As one of ordinary skill in the art will appreciate, however, stepsdescribed above may be only part of an overall process flow used to filland recess the dielectric material. For example, lining steps, cleaningsteps, annealing steps, gap-filling steps, combinations of these, or thelike may also be utilized to form and fill first trenches 103 with thedielectric material. All such potential process steps are includedwithin the scope of representative embodiments described herein.

After first isolation regions 105 have been formed, dummy gatedielectric 109, dummy gate electrode 111 over dummy gate dielectric 109,and first spacers 113 may be formed over each of fins 107. In anembodiment, dummy gate dielectric 109 may be formed by thermaloxidation, chemical vapor deposition (CVD), sputtering, or any othermethods (whether now known or hereafter derived in the art) for forminga gate dielectric. Depending on the technique of gate dielectricformation, a dummy gate dielectric 109 thickness on the top of fins 107may be different from a gate dielectric thickness on a sidewall of fins107.

Dummy gate dielectric 109 may comprise a material such as silicondioxide or silicon oxynitride with a thickness ranging from about 3angstroms (Å) to about 100 Å, such as about 10 Å. Dummy gate dielectric109 may be formed from a high permittivity (high-k) material (e.g., witha relative permittivity greater than about 5) such as lanthanum oxide(La₂O₃), aluminum oxide (Al₂O₃), hafnium oxide (HfO₂), hafniumoxynitride (HfON), or zirconium oxide (ZrO₂), or combinations thereof,with an equivalent oxide thickness of about 0.5 Å to about 100 Å, suchas about 10 Å or less. Additionally, any combination of silicon dioxide,silicon oxynitride, and/or high-k materials may also be used for dummygate dielectric 109.

Dummy gate electrode 111 may comprise a conductive material and may beselected from a group comprising W, Al, Cu, AlCu, W, Ti, TiAlN, TaC,TaCN, TaSiN, Mn, Zr, TiN, Ta, TaN, Co, Ni, combinations of these, or thelike. Dummy gate electrode 111 may be deposited by chemical vapordeposition (CVD), sputter deposition, or other techniques known and usedin the art for depositing conductive materials. The thickness of dummygate electrode 111 may be in the range of about 5 Å to about 200 Å. Thetop surface of dummy gate electrode 111 may have a non-planar surface,and may be planarized prior to patterning of dummy gate electrode 111 orgate etch. Ions may or may not be introduced into dummy gate electrode111 at this point. Ions may be introduced, for example, by ionimplantation techniques.

Once formed, dummy gate dielectric 109 and dummy gate electrode 111 maybe patterned to form a series of stacks 115 over fins 107. Stacks 115define multiple channel regions located on each side of fins 107 beneathdummy gate dielectric 109. Stacks 115 may be formed by depositing andpatterning a gate mask (not separately illustrated in FIG. 1) on dummygate electrode 111 using, for example, deposition and photolithographytechniques known in the art. The gate mask may incorporate commonly usedmasking and sacrificial materials, such as (but not limited to) siliconoxide, silicon oxynitride, SiCON, SiC, SiOC, and/or silicon nitride andmay be deposited to a thickness of between about 5 Å and about 200 Å.Dummy gate electrode 111 and dummy gate dielectric 109 may be etchedusing a dry etching process to form patterned stacks 115.

Once stacks 115 have been patterned, first spacers 113 may be formed.First spacers 113 may be formed on opposing sides of stacks 115. Firstspacers 113 may be formed by blanket depositing a spacer layer (notseparately illustrated in FIG. 1) on the previously formed structure.The spacer layer may comprise SiN, oxynitride, SiC, SiON, SiOCN, SiOC,oxide, or the like and may be formed by methods utilized to form such alayer, such as chemical vapor deposition (CVD), plasma enhanced CVD(PECVD), sputter, and other methods known in the art. The spacer layermay comprise a different material with different etch characteristics orthe same material as the dielectric material within first isolationregions 105. First spacers 113 may then be patterned, such as by one ormore etches to remove the spacer layer from horizontal surfaces of thestructure, to form first spacers 113.

In an embodiment, first spacers 113 may be formed to have a firstthickness T₁ of between about 5 Å and about 500 Å. Additionally, oncefirst spacers 113 have been formed, a first spacer 113 adjacent to onestack 115 may be separated from a first spacer 113 adjacent to anotherstack 115 by a first distance D₁. However, any suitable thicknesses anddistances may be alternatively, conjunctively, or sequentially utilized.

FIGS. 2, 2A and 2B illustrate removal of fins 107 from those areas notprotected by stacks 115 and first spacers 113, and a regrowth ofsource/drain regions 201 (with FIG. 2A illustrating a cross-sectionalview of FIG. 2 along line A-A′ and FIG. 2B illustrating across-sectional view of FIG. 2 along line B′-B′). Removal of fins 107from areas not protected by stacks 115 and first spacers 113 may beperformed by a reactive ion etch (RIE) using stacks 115 and firstspacers 113 as hardmasks, or by any other suitable removal process. Theremoval may be continued until fins 107 are either substantially planarwith (as illustrated) or below the surface of first isolation regions105. Although recessing of fins 107 is representatively illustrated inFIG. 2 with upper surfaces of recessed fin portions 107′, 107″, 107′″ atsubstantially a same level as the upper surface of first isolationregion 105, it will be appreciated that fins 107 may be recessed belowthe upper surface of first isolation region 105, or even below thebottom surface of first isolation region 105, in other embodiments.

Once portions of fins 107 have been removed, a hard mask (not separatelyillustrated in the Figures) is placed and patterned to cover dummy gateelectrode 111 to prevent growth, and source/drain regions 201 may beregrown in contact with each of fins 107. In an embodiment, source/drainregions 201 may be regrown and, in some embodiments, source/drainregions 201 may be regrown to form a stressor that will impart a stressto channel regions of fins 107 located underneath stacks 115. In anembodiment wherein fins 107 comprise silicon and the FinFET is a p-typedevice, source/drain regions 201 may be regrown through a selectiveepitaxial process with a material, e.g., silicon or a material such assilicon germanium that has a different lattice constant than material ofthe channel regions. The epitaxial growth process may use precursorssuch as silane, dichlorosilane, germane, or the like at a temperature ofbetween about 400° C. and about 1000° C., such as about 600° C. and at apressure of between about 5 Torr and about 1000 Torr. However, anysuitable process parameters may be utilized.

In a particular embodiment in which the fin portions 107, 107′, and 107″have a first pitch P₁ of about 30 nm, the epitaxial growth is maintainedfor a time of between about 20 and about 25 minutes in order to obtainepitaxial structures 201-7 b, 201-7 b′, 201-7 b″ which are discreteepitaxial structures that are laterally adjoined to each other. That isto say that epitaxial structure 201-7 b has a lateral extent contactinga first lateral extent of epitaxial structure 201-7 b′, and epitaxialstructure 201-7 b″ also has a lateral extent contacting an opposingsecond lateral extent of epitaxial structure 201-7 b″. However, anysuitable time may be utilized.

In an embodiment, source/drain regions 201 may be formed to have a firstheight H₁ over first isolation regions 105. In such an embodiment,source/drain regions 201 may be formed to have a height above the uppersurface of first isolation regions 105 of between about 5 nm and about250 nm, such as about 100 nm. However, any suitable height may beutilized.

Once source/drain regions 201 are formed, dopants may be implanted intosource/drain regions 201 by implanting appropriate dopants to complementdopants in fins 107. For example, p-type dopants such as boron, gallium,indium, or the like may be implanted to form a PMOS device.Alternatively, n-type dopants such as phosphorous, arsenic, antimony, orthe like may be implanted to form an NMOS device. The dopants may beimplanted using stacks 115 and first spacers 113 as masks. It should benoted that one of ordinary skill in the art will appreciate that manyother processes, steps, or the like may be used to implant dopants. Forexample, one of ordinary skill in the art will realize that pluralimplants may be performed using various combinations of spacers andliners to form source/drain regions having a specific shape orcharacteristic suitable for a particular purpose. Any such processes maybe used to implant the dopants, and the above description is not meantto limit the disclosure to only steps described above.

Additionally, at this point, the hard mask that covered dummy gateelectrode 111 during formation of source/drain regions 201 is removed.In a representative embodiment, the hard mask may be removed using,e.g., a wet or dry etching process selective to material of the hardmask; however, any suitable removal process may be utilized.

FIGS. 3A and 3B illustrate formation of inter-layer dielectric (ILD)layer 203 (also illustrated in dashed lines in FIG. 2 for clarity) overstacks 115 and source/drain regions 201. ILD layer 203 may comprise amaterial such as boron phosphorous silicate glass (BPSG), although anysuitable dielectric material or combination of materials may be used.ILD layer 203 may be formed to a thickness of between about 100 Å andabout 3,000 Å. Once formed, ILD layer 203 may be planarized with firstspacers 113 using, e.g., a planarization process such as chemicalmechanical polishing (CMP) process, although any suitable process may beutilized.

In a particular embodiment the ILD 203 may be formed using a depositionprocess such as low pressure chemical vapor deposition (LPCVD),plasma-CVD, flowable CVD, PVD, PECVD, or the like, at a temperature ofbetween about 50° C. and about 300° C. and a pressure of between about0.5 torr and about 760 torr. Additionally, the deposition process may beperformed for a time of between about 100 seconds and about 800, such asbetween about 500 seconds and about 800 seconds. However, any suitabledeposition process conditions may be utilized.

By depositing the ILD 203 with these deposition parameters, and giventhe shape of the source/drain regions 201, void regions 1150 and 1150′are formed within the material of ILD 203 underlying epitaxialstructures 201-7 b, 201-7 b′, 201-7 b″. In an embodiment the voidregions 1150, 1150′ will have a second height H₂ of between about 8 nmand about 15 nm and a first width W₁ of between about 9 nm and about 10nm. However, any suitable dimensions may be utilized.

Additionally, the void regions 1150, 1150′ may be formed such that thevoid regions 1150, 1150′ are separated from both the epitaxialstructures 201-7 b, 201-7 b′, 201-7 b″ as well as the first isolationregions 105. For example, in some embodiments the void regions 1150,1150′ may be spaced apart from the point of contact between epitaxialstructures 201-7 b, 201-7 b′, 201-7 b″ (in a direction perpendicular toa major surface of the substrate 101) a second distance D₂ of betweenabout 5 nm and about 30 nm, such as about 15 nm. Similarly, the voidregions 1150, 1150′ may be spaced apart from the first isolation regions105 a third distance D₃ of between about 2 nm and about 20 nm, such asabout 5 nm. As such, a ratio between the second distance D₂ and thethird distance D₃ may be between about 5 and about 15, such as about 3.However, any suitable distances and ratios may be utilized.

FIG. 3C illustrates a top down view of the structure of FIGS. 3A and 3B.As can be seen, void regions 1150, 1150′ (shown in dashed becausesource/drain regions 201 overlie void regions 1150, 1150′) are locatedbetween different ones of the gate stacks 205 and their respective firstspacers 113. In particular, void regions 1150, 1150′ are located withinthe source/drain regions 201 over the first isolation regions 105 (notseparately illustrated in FIG. 3C).

FIG. 3A also illustrates formation of a first opening 305 through ILDlayer 203 in order to expose source/drain regions 201 in preparation forformation of a first contact 401 (not illustrated in FIG. 3A, butillustrated and described below with respect to FIG. 4). Additionally,for convenience, gate stack 205 is illustrated in a simplified formwithout showing component layers thereof. In an embodiment, firstopening 305 may be formed by initially placing and patterning hardmask301 over source/drain regions 201. In an embodiment, hardmask 301 maycomprise a dielectric material, such as silicon nitride, although anysuitable masking material may be utilized.

Once hardmask 301 has been placed, hardmask 301 is patterned. In anembodiment, a first photoresist may be patterned by depositing and thenexposing a photosensitive material onto the hardmask 301. The impact ofthe energy will cause a chemical reaction in those parts of thephotosensitive material that were exposed to the patterned energysource, thereby modifying physical properties of exposed portions of thephotoresist, such that physical properties of the exposed portions ofthe photosensitive material are different from physical properties ofthe unexposed portions of photosensitive material. The photosensitivematerial may then be developed with, e.g., a developer (not separatelyillustrated in the Figures), in order to separate exposed portions ofphotosensitive material from unexposed portions of photosensitivematerial. Thereafter, hardmask 301 may be patterned using an anisotropicetch with the exposed portions of photosensitive material serving as amask.

Once hardmask 301 has been patterned, first opening 305 may be formedusing hardmask 301 as a mask. In an embodiment, first opening 305 may beformed using a first etching process (represented in FIG. 3 by thecurvilinear arrow labeled 303), which may be an anisotropic etchingprocess, such as a reactive ion etch process; however, any suitableprocess, such as a wet etching process, and any suitable reactants maybe used.

First etching process 303 may be utilized to form first opening 305 inpreparation for formation of first contact 401. In a particularembodiment, first etching process 303 may be utilized to remove materialof source/drain region 201 to a distance sufficient to expose thesource/drain region 201. However, any suitable depth may be utilized.Additionally, first opening 305 at a point adjacent to a top of firstspacer 113 may have a width (from hardmask 301) of between about 10 nmand about 50 nm, and may also have a width at a bottom of the firstopening 305 of between about 8 nm and about 40 nm; however, any suitabledimensions may be utilized.

Once first opening 305 has been formed, hardmask 301 may be removed. Inan embodiment, hardmask 301 may be removed using, e.g., a wet or dryetching process that employs an etchant selective to material ofhardmask 301; however, any suitable removal process may also beutilized.

FIG. 3A also illustrates that, after formation of ILD layer 203,material of dummy gate electrode 111 may be removed and replaced to formgate stack 205. In a representative embodiment, dummy gate electrode 111may be removed using, e.g., a wet or dry etching process that employsetchants selective to material of dummy gate electrode 111. However, anysuitable removal process may be utilized.

Once dummy gate electrode 111 has been removed, openings left behind maybe refilled to form gate stack 205. In a particular embodiment, gatestack 205 comprises a first dielectric material 211, a first metalmaterial 213, a second metal material 215, and a third metal material217. In an embodiment, first dielectric material 211 is a high-kmaterial such as HfO₂, HfSiO, HfSiON, HfTaO, HfTiO, HfZrO, LaO, ZrO,Ta₂O₅, combinations of these, or the like, deposited through a processsuch as atomic layer deposition (ALD), chemical vapor deposition (CVD),or the like. First dielectric material 211 may be deposited to athickness of between about 5 Å and about 200 Å. Any suitable material,material deposition process, or material thickness may be utilized.

First metal material 213 may be formed adjacent to first dielectricmaterial 211 and may be formed from a metallic material such as Ti,TiAlN, TaC, TaCN, TaSiN, Mn, Zr, TiN, TaN, Ru, Mo, WN, combinations ofthese, or the like. First metal material 213 may be deposited using adeposition process such as atomic layer deposition (ALD), chemical vapordeposition (CVD), sputtering, or the like, to a thickness of betweenabout 5 Å and about 500 Å, although any suitable deposition process orthickness may be used.

Second metal material 215 may be formed adjacent to first metal material213 and, in a particular embodiment, may be similar to first metalmaterial 213. For example, second metal material 215 may be formed froma metallic material such as Ti, TiAlN, TaC, TaCN, TaSiN, Mn, Zr, TiN,TaN, Ru, Mo, WN, combinations of these, or the like. Additionally,second metal material 215 may be deposited using a deposition processsuch as atomic layer deposition (ALD), chemical vapor deposition (CVD),sputtering, or the like, to a thickness of between about 5 Å and about500 Å, although any suitable deposition process or thickness may beused.

Third metal material 217 fills a remainder of the opening left behind byremoval of dummy gate electrode 111. In an embodiment, third metalmaterial 217 is a metallic material such as W, Al, Cu, AlCu, W, Ti,TiAlN, TaC, TaCN, TaSiN, Mn, Zr, TiN, Ta, TaN, Co, Ni, combinations ofthese, or the like, and may be deposited using a deposition process suchas atomic layer deposition (ALD), chemical vapor deposition (CVD),sputtering, or the like to fill or overfill the opening left by removalof dummy gate electrode 111. In a particular embodiment, third metalmaterial 217 may be deposited to a thickness of between about 5 Å andabout 500 Å, although any suitable material, deposition process, ormaterial thickness may be utilized.

Once the opening left behind by the removal of dummy gate electrode 111has been filled, the materials may be planarized in order to remove anymaterial that is outside of the opening left behind by the removal ofdummy gate electrode 111. In a particular embodiment, removal may beperformed using a planarization process such as chemical mechanicalpolishing (CMP); however, any suitable planarization or other removalprocess may be utilized.

After materials of gate stack 205 have been formed and planarized,materials of gate stack 205 may be recessed and capped with a cappinglayer 221. In an embodiment, materials of gate stack 205 may be recessedusing, e.g., a wet or dry etching process that employs etchantsselective to materials of gate stack 205. Any suitable recession processor recession distance may be utilized.

Once materials of gate stack 205 have been recessed, capping layer 221may be deposited and planarized with first spacers 113. In anembodiment, capping layer 221 comprises a material such as SiN, SiON,SiCON, SiC, SiOC, combinations of these, or the like, deposited using adeposition process such as atomic layer deposition (ALD), chemical vapordeposition (CVD), sputtering, or the like. Capping layer 221 may bedeposited to a thickness of between about 5 Å and about 200 Å, and thenplanarized using a planarization process such as chemical mechanicalpolishing (CMP) such that capping layer 221 is substantially planar withfirst spacers 113.

FIG. 4 illustrates a formation of first contact 401 as well as formationof first etch stop layer 403 and first dielectric layer 405. Optionally,prior to formation of first contact 401, a silicide contact may beformed. The silicide contact may comprise titanium, nickel, cobalt, orerbium in order to reduce a Schottky barrier height of the contact;however, other metals, such as platinum, palladium, or the like, mayalso be used. The silicidation may be performed by blanket deposition ofan appropriate metal layer, followed by an annealing step which causesthe metal to react with underlying exposed silicon. Un-reacted metal isthen removed, such as with a selective etch process. The thickness ofthe silicide contact may be between about 5 nm and about 50 nm.

In a representative embodiment, first contact 401 may comprise aconductive material such as Ti, W, TiAlN, TaC, TaCN, TaSiN, Mn, Zr, TiN,TaN, Ru, Mo, or WN, although any suitable material, such as aluminum,copper, alloys of these, combinations of these, or the like may be used.Conductive material may be deposited into first opening 305 using adeposition process such as sputtering, chemical vapor deposition (CVD),electroplating, electroless plating, or the like, to fill and/oroverfill first opening 305 formed by first etching process 303. Oncefilled (or overfilled), any material deposited outside of first opening305 may be removed using a planarization process such as chemicalmechanical polishing (CMP); however, any suitable material removalprocess may be utilized.

In a representative embodiment, first etch stop layer 403 may be formedof silicon nitride using plasma enhanced chemical vapor deposition(PECVD), although other materials such as SiON, SiCON, SiC, SiOC,SiC_(x)N_(y), SiO_(x), other dielectrics, combinations thereof, or thelike, and alternative techniques of forming the first etch stop layer403, such as low pressure CVD (LPCVD), PVD, or the like, couldalternatively be used. First etch stop layer 403 may have a thickness ofbetween about 5 Å and about 500 Å.

Once first etch stop layer 403 has been formed, first dielectric layer405 is formed. First dielectric layer 405 may be made of one or moresuitable dielectric materials, such as low-k dielectrics (e.g., carbondoped oxides), extremely low-k dielectrics (e.g., porous carbon dopedsilicon dioxide), silicon oxide, silicon nitride, a polymer (e.g.,polyimide), combinations of these, or the like. First dielectric layer405 may be formed through a process such as a spin-on process or achemical vapor deposition (CVD), although any suitable process may beutilized.

FIG. 4 also illustrates a patterning of both first dielectric layer 405and first etch stop layer 403 to form second opening 407 that exposesfirst contact 401. In a representative embodiment, first dielectriclayer 405 and first etch stop layer 403 may be patterned by initiallyplacing and patterning second photoresist 409 over first dielectriclayer 405. In an embodiment, second photoresist 409 may be a tri-layerphotoresist that is exposed with a patterned energy in order to patternsecond photoresist 409. Second photoresist 409 may then be developed andetched to pattern second photoresist 409.

Once second photoresist 409 has been patterned, the pattern of secondphotoresist 409 may be transferred to first dielectric layer 405 andfirst etch stop layer 403 using second photoresist 409 as a mask. In anembodiment, first dielectric layer 405 may be patterned using a secondetching process (represented in FIG. 4 by the curvilinear arrow labeled411), which may be an anisotropic etching process, such as a reactiveion etch process; however, any suitable process, such as a wet etchingprocess, and any suitable reactants may be used.

Second etching process 411 may be utilized to remove material of firstdielectric layer 405 to form second opening 407 in preparation offormation of second contact 501 (not illustrated in FIG. 4, butillustrated and discussed below with respect to FIG. 5). In a particularembodiment, second etching process 411 may be utilized to removematerial of first dielectric layer 405 until first etch stop layer 403is exposed; however, any suitable process of removal, such as a wetetch, may be utilized.

Once first etch stop layer 403 has been exposed, the pattern of firstdielectric layer 405 may be transferred through first etch stop layer403 to expose first contact 401. In a representative embodiment, thepattern may be transferred using, e.g., an anisotropic etch process,such as a reactive ion etch, that uses etchants selective to material offirst etch stop layer 403; however, any suitable etchants or processes,such as a wet etch, may also be utilized. Additionally, after first etchstop layer 403 has been opened to expose underlying first contact 401,the etching may either be stopped without extending into first contact401, or may be continued to slightly over-etch and form second opening407 to extend partially into first contact 401.

FIG. 5 representatively illustrates removal of second photoresist 409,as well as formation of second contact 501. In an embodiment, secondphotoresist 409 may be removed using, e.g., an ashing process, whereby atemperature of second photoresist 409 is increased until secondphotoresist 409 undergoes a thermal decomposition, at which point secondphotoresist 409 may be easily removed; however, any suitable removalprocess, such as a wet etch, may also be utilized.

After first contact 401 has been exposed, a conductive material may bedeposited to fill and/or overfill second opening 407 to make electricalconnection with first contact 401. In a representative embodiment,second contact 501 may comprise a conductive material such as tungsten(W), although any suitable material, such as aluminum, copper, alloys ofthese, combinations of these, or the like, may be alternatively orconjunctively used. The conductive material may be deposited using adeposition process such as sputtering, chemical vapor deposition (CVD),electroplating (with a seed layer), electroless plating, or the like, tofill and/or overfill second opening 407. Once filled or overfilled, anymaterial deposited outside of second opening 407 may be removed using aplanarization process such as chemical mechanical polishing (CMP).

FIG. 6 illustrates another embodiment of the formation of epitaxialsource/drain structures 201-6 b, 201-6 b′, 201-6 b″ over respective finportions 107′, 107″, 107′″ if the epitaxial growth process (describedabove with respect to FIGS. 2, 2A and 2B) is not allowed to proceed forthe full amount of time for discrete structures to merge or contact witheach other, or if the fin pitch P₁ is decreased. In this embodiment,epitaxial structures 201-7 b, 201-7 b′, 201-7 b″ (as representativelyillustrated in FIG. 6) may be formed. If the epitaxial growth process isterminated prior to contacting, (e.g., prior to the time to produce thestructure representatively illustrated in FIG. 2B), the epitaxialstructures will remain discrete epitaxial structures 201-7 b, 201-7 b′,201-7 b″ separated from each other. In a particular embodiment theepitaxial growth process may be continued for a period of time, such asbetween about 15 minutes and 20 minutes (for about 20-30 cycles)configured to produce substantially discrete epitaxial structures 201-7b, 201-7 b′, 201-7 b″ that are spaced apart from each other by a fourthdistance D₄ of between about 30 nm and about 100 nm. However, anysuitable distance may be utilized.

FIG. 7 illustrates yet another embodiment of the formation of epitaxialsource/drain structures in which the discrete structures not only comeinto contact with each other (as described above with respect to FIGS.2, 2A, and 2B) but merge into a single merged epitaxial structure 201-8b that comprises an upper and/or lower surface having an irregularsurface topology in general correspondence to planes of epitaxial growthfor the former discrete epitaxial structures initially formed over finportions 107′, 107″, 107′″. In a particular embodiment the irregularsurface topology may have a surface roughness of between about 2 andabout 10 nm, and may be achieved by continuing the deposition processdescribed above for a time of between about 25 minutes and about 30minutes. However, any suitable time or surface roughness may beutilized.

If the epitaxial growth process extends still further in time (e.g.,past the time to produce the merged epitaxial structure 201-8 billustrated in FIG. 7 above), the irregular surface topologyrepresentatively illustrated in FIG. 7 may be filled in to produce asubstantially planar upper and/or lower surface, as representativelyillustrated in FIG. 8. Additionally, as used herein, the term “planar”may be generally understood to mean a level of local and/or globalsurface topography differentials that are generally consistent withprocess variations—and not that the surface is necessarily flat or evensubstantially flat.

In a particular embodiment the merged epitaxial structure 201-9 b may beformed by continuing the deposition process for a time period of greaterthan about 30 minutes. Such a time period will form the merged epitaxialstructure 201-9 b to have a height from the first isolation regions 105of between about 45 nm and about 60 nm and have a width of between about60 nm and about 150 nm. Additionally, the planar top surface of themerged epitaxial structure 201-9 b may form an angle of less than 30°with an adjoining facet of the merged epitaxial structure 201-9 b.However, any suitable time or dimensions may be utilized.

FIGS. 9-17 representatively illustrate embodiments in which the shape ofthe first isolation region 105 (e.g., shallow trench isolation (STI)features) may be tuned as desired. In embodiments representativelyillustrated in FIGS. 9-17, a shape of top surfaces of first isolationregion 105 may be tuned to have concave shapes 1000 between fin portions107′, 107″, 107′″, wherein a distance between adjacent fins comprisesthe first pitch P₁. In a particular embodiment, the concave shape may beobtained during the etching of the first isolation region 105 and fins107 to expose fin portions 107′, 107″, 107′″ by performing one or moreover-etchings of first isolation region 105 after fin portions 107′,107″, 107′″ have been exposed. For example, the recessing describedabove with respect to FIG. 1 may be performed, and the etching processmay be continued for an additional 30% of the process time originallyused for the recessing step. Bu utilizing such an overetching, the firstisolation region 105 may be formed with a concave shape that has, forexample, a distance of concavity D_(c) (a distance of the lowest pointrelative to a planar surface) of between about 1 nm and about 15 nm,such as about 5 nm. However, any suitable concavity may be utilized.

FIGS. 9 and 10 representatively illustrate an embodiment where discreteepitaxial structures 201-7 b, 201-7 b′, 201-7 b″ (in at least nominalcontact with each other owing to the duration of epitaxial growth and/orconfigured fin pitch as described above with respect to FIGS. 2, 2A and2B) are located over the concave shapes 1000 of the first isolationregions 105 and are encapsulated in the ILD 203. In a particularembodiment the ILD 203 may be formed as described above, including usinga deposition process such as low pressure chemical vapor deposition(LPCVD), plasma-CVD, flowable CVD, PVD, PECVD, or the like, at atemperature of between about 50° C. and about 300° C. and a pressure ofbetween about 0.5 torr and about 760 torr. Additionally, the depositionprocess may be performed for a time of between about 100 seconds andabout 800, such as between about 500 seconds and about 800 seconds. Sucha deposition process, along with the contacting shape of the epitaxialstructures 201-7 b, will form the void regions 1150 and 1150′ in FIG. 10to have a third height H₃ of between about 8 nm and about 15 nm and asecond width W₂ of between about 9 nm and about 10 nm. However, anysuitable dimensions or process conditions may be utilized.

Additionally, the void regions 1150, 1150′ may be formed such that thevoid regions 1150, 1150′ are separated from both the epitaxialstructures 201-7 b, 201-7 b′, 201-7 b″ as well as the first isolationregions 105. For example, in some embodiments the void regions 1150,1150′ may be spaced apart from the point of contact between epitaxialstructures 201-7 b, 201-7 b′, 201-7 b″ (in a direction perpendicular toa major surface of the substrate 101) a fifth distance D₅ of betweenabout 2 nm and about 15 nm, such as about 5 nm. Similarly, the voidregions 1150, 1150′ may be spaced apart from the first isolation regions105 a sixth distance D₆ of between about 1 nm and about 10 nm, such asabout 3 nm. As such, a ratio between the fifth distance D₅ and the sixthdistance D₆ may be between about 1 nm and about 10 nm, such as about 5nm, while a ratio of the sixth distance D₆ and the distance of concavityD_(c) is between about 1 and about 15, such as about 2. However, anysuitable distances and ratios may be utilized.

FIGS. 11 and 12 representatively illustrate an embodiment whereinconcave first isolation regions 105 and merged epitaxial structure 201-8b (as described above with respect to FIG. 7) are encapsulated in ILD203. During deposition of ILD 203, void regions 1350, 1350′ are formedwithin ILD 203 and underlying epitaxial structure 201-8 b. In aparticular embodiment ILD 203 is deposited as described above withrespect to FIGS. 3A-3B for a time period of between about 300 secondsand about 500 seconds. Such a deposition process, along with thecontacting shape of the source/drain region 201-8 b and the concaveshape 1000 of the first isolation regions 105, will form the voidregions 1350 and 1350′ to have a fourth height H₄ of between about 8 nmand about 15 nm and a third width W₃ of between about 9 nm and about 10nm. However, any suitable dimensions or process conditions may beutilized.

Additionally, while the void regions 1350, 1350′ may be formed such thatthe void regions 1350, 1350′ expose a bottom surface of the epitaxialstructure 201-8 b, the void regions 1350, 1350′ may also be formed to beseparated from the first isolation regions 105. For example, in someembodiments the void regions 1350, 1350′ may be spaced apart from thefirst isolation regions 105 a seventh distance D₇ of between about 1 nmand about 10 nm, such as about 3 nm. As such, a ratio between the fourthheight H₄ and the seventh distance D₇ may be between about 5 nm andabout 20 nm such as about 15 nm while a ratio of the seventh distance D₇and the distance of concavity D_(c) is between about 1.6 and about 20,such as about 5. However, any suitable distances and ratios may beutilized.

FIGS. 13 and 14 representatively illustrate an embodiment wherein theconcave shapes 1000 of the first isolation regions 105 are utilized withthe merged epitaxial structure 201-9 b when the merged epitaxialstructure 201-9 b is planar (as described above with respect to FIG. 8)and, in FIG. 14, wherein the merged epitaxial structure 201-9 b isencapsulated in ILD 203. In this embodiment the deposition process forthe ILD 203 may be continued as described above for a time period ofbetween about 100 seconds and about 300 seconds. However, any suitabletime of deposition may be utilized.

By utilizing the deposition and time as described, void regions 1550,1550′ are formed within material forming ILD 203 and underlyingepitaxial structure 201-9 b. In a particular embodiment, the concaveshapes 1000 of the first isolation regions 105 and the planar shape ofthe merged epitaxial structure 201-9 b will form the void regions 1550,1550′ to expose a portion of the underside of the merged epitaxialstructure 201-9 b, and the void regions 1550, 1550′ may have a fourthwidth W₄ of less than about 5 nm and a fifth height H₅ of less thanabout 10 nm. However, any suitable dimensions may be utilized.

Additionally, while the void regions 1550, 1550′ may be formed such thatthe void regions 1550, 1550′ expose a bottom surface of the epitaxialstructure 201-9 b, the void regions 1550, 1550′ may also be formed to beseparated from the first isolation regions 105. For example, in someembodiments the void regions 1550, 1550′ may be spaced apart from thefirst isolation regions 105 an eighth distance D₈ of between about 1 nmand about 10 nm, such as about 4 nm. As such, a ratio between the fifthheight H₅ and the eighth distance D₈ may be between about 0.5 and about2, such as about 1 while a ratio of the eighth distance D₈ and thedistance of concavity D_(c) is between about 0.2 and about 2, such asabout 0.8. However, any suitable distances and ratios may be utilized.

FIG. 15 representatively illustrates an embodiment where the duration ofthe deposition (e.g., by CVD) of the ILD 203 may be extended orotherwise tuned to form smaller void regions 1650, 1650′ underlyingdiscrete epitaxial structures 201-7 b, 201-7 b′, 201-7 b″ (as describedabove with respect to FIG. 10). In a particular embodiment the time ofdeposition in this embodiment may be extended to be longer than the timedescribed above with respect to FIG. 10, while still being between about100 seconds and about 800 seconds. Such a time forms void regions 1650,1650′ to have a sixth height H₆ of between about 2 nm and about 8 nm anda fifth width W₅ of between about 3 nm and about 5 nm. However, anysuitable time and dimensions may be utilized.

Additionally, the void regions 1650, 1650′ may be formed such that thevoid regions 1650, 1650′ are separated from both the epitaxialstructures 201-7 b, 201-7 b′, 201-7 b″ as well as the first isolationregions 105. For example, in some embodiments the void regions 1650,1650′ may be spaced apart from the point of contact between epitaxialstructures 201-7 b, 201-7 b′, 201-7 b″ (in a direction perpendicular toa major surface of the substrate 101) a ninth distance D₉ of betweenabout 10 nm and about 50 nm, such as about 25 nm. Similarly, the voidregions 1650, 1650′ may be spaced apart from the first isolation regions105 a tenth distance D₁₀ of between about 1 nm and about 10 nm, such asabout 3 nm. As such, a ratio between the ninth distance D₉ and the tenthdistance D₁₀ may be between about 10 and about 50, such as about 8,while a ratio of the tenth distance D₁₀ and the distance of concavityD_(c) is between about 0.5 and about 5, such as about 1. However, anysuitable distances and ratios may be utilized.

FIG. 16 representatively illustrates an embodiment where the duration ofthe deposition of the ILD 203 may be extended or otherwise tuned to formsmaller void regions 1750, 1750′ under merged epitaxial structure 201-8b (as described above with respect to FIG. 12). In a particularembodiment the time of deposition in this embodiment may be extended tobe longer than the time described above with respect to FIG. 12, whilestill being between about 100 seconds and about 800 seconds. Such a timeforms void regions 1750, 1750′ to have a height of less than about 10 nmand a sixth width W₆ of less than about 5 nm. However, any suitable timeand dimensions may be utilized.

Additionally, the void regions 1750, 1750′ may be formed such that thevoid regions 1750, 1750′ are separated from both the merged epitaxialstructure 201-8 b as well as the first isolation regions 105. Forexample, in some embodiments the void regions 1750, 1750′ may be spacedapart from the merged epitaxial structure 201-8 b (in a directionperpendicular to a major surface of the substrate 101) an eleventhdistance D₁₁ of between about 1 nm and about 20 nm, such as about 5 nm.Similarly, the void regions 1750, 1750′ may be spaced apart from thefirst isolation regions 105 a twelfth distance D₁₂ of between about 1 nmand about 10 nm, such as about 3 nm. As such, a ratio between theeleventh distance D₁₁ and the twelfth distance D₁₂ may be between about1 and about 20, such as about 1.6, while a ratio of the twelfth distanceD₁₂ and the distance of concavity D_(c) is between about 0.5 and about3, such as about 1. However, any suitable distances and ratios may beutilized.

FIG. 17 representatively illustrates an embodiment where the duration ofthe deposition of the ILD 203 may be extended or otherwise tuned to formsmaller void regions 1850, 1850′ under merged epitaxial structure 201-9b (as described above with respect to FIG. 14). In a particularembodiment the time of deposition in this embodiment may be extended tobe longer than the time described above with respect to FIG. 14, whilestill being between about 100 seconds and about 800 seconds. Such a timeforms void regions 1850, 1850′ to have an eighth height H₈ of less thanabout 8 nm and a seventh width W₇ of less than about 3 nm. However, anysuitable time and dimensions may be utilized.

Additionally, while the void regions 1850, 1850′ may be formed such thatthe void regions 1850, 1850′ expose a bottom surface of the epitaxialstructure 201-9 b, the void regions 1850, 1850′ may also be formed to beseparated from the first isolation regions 105. For example, in someembodiments the void regions 1850, 1850′ may be spaced apart from thefirst isolation regions 105 a thirteenth distance D₁₃ of between about 1nm and about 10 nm, such as about 5 nm. As such, a ratio between theeighth height H₈ and the thirteenth distance D₁₃ may be between about 1nm and about 10 nm, such as about 3 nm while a ratio of the thirteenthdistance D₁₃ and the distance of concavity D_(c) is between about 1 andabout 10, such as about 1.8. However, any suitable distances and ratiosmay be utilized.

FIG. 18 representatively illustrates an embodiment where ILD voidregions 2050, 2050′ are formed over tapered recessed portions 2000. Inaccordance with representative embodiments, in order to obtain thetapered recessed portions 2000, the first isolation regions 105 areformed with a first main etching step. In an embodiment the first mainetching step may be the process described above with respect to therecessing to form the first isolation regions 105. For example, in themain etching step, a plasma from a one or more etchants including CH₄,CF₄, CH₂F₂, CHF₃, O₂, HBr, Cl₂, NF₃, N₂ and/or He may be utilized toetch the dielectric material and form the first isolation region. Themain etching step may be performed at a pressure of between about 3mTorr to about 20 mTorr and a temperature of between about 30° C. andabout 80° C., although any suitable temperature and pressure may beutilized.

Once the first isolation regions 105 have been formed, the outer firstisolation regions 105 (those not located between adjacent fins 107), maybe masked, and a series of overetches may be performed on the innerfirst isolation regions 105 (those located between the fins 107) to formthe tapered recessed portions 2000. In an embodiment a first overetchmay be a simple continuation of the main etch and may be performed for atime period after the normal endpoint of the main etch to form the firstisolation regions 105. In a particular embodiment the first overetch maybe continued pass the time of the main etch for a time of between about30% to about 80% of the main etch. However, any suitable amount of timemay be utilized.

A second overetch is used to form the final tapered shape of the taperedrecess portions 2000 and uses a plasma from a one or more etchantsincluding CH₃F, CH₄, CF₄, CH₂F₂, CHF₃, O₂, HBr, Cl₂, NF₃, N₂, SF₆ and/orHe may be utilized to etch the first isolation region 105. The secondoveretch step may be performed at a pressure of between about 5 mTorr toabout 10 mTorr and a temperature of between about 30° C. and about 60°C., although any suitable temperature and pressure may be utilized.

Once the first isolation region 105 has been formed, processing may becontinued as described above through the formation of the ILD layer 203.However, by forming the tapered shape, the void regions 2050, 2050′ maybe formed such that the void regions 2050, 2050′ are separated from boththe epitaxial structures 201-7 b, 201-7 b′, 201-7 b″ as well as thefirst isolation regions 105. For example, in some embodiments the voidregions 2050, 2050′ may be spaced apart from the epitaxial structures201-7 b, 201-7 b′, 201-7 b″ (in a direction perpendicular to a majorsurface of the substrate 101) a fourteenth distance D₁₄ of between about5 nm and about 25 nm, such as about 40 nm. Similarly, the void regions2050, 2050′ may be spaced apart from the first isolation regions 105 afifteenth distance D₁₅ of between about 1 nm and about 5 nm, such asabout 2 nm. As such, a ratio between the fourteenth distance D₁₄ and thefifteenth distance D₁₅ may be between about 1 nm and about 8 nm, such asabout 2 nm, while a ratio of the fifteenth distance D₁₅ and the distanceof concavity D_(c) is between about 1 and about 20, such as about 2.Additionally, the void regions 2050, 2050′ may be formed to have a ninthheight H₉ of between about 5 nm and about 15 nm, such as about 10 nm,and an eighth width W₈ of between about 1 nm and about 10 nm, such asabout 3 nm. However, any suitable distances and ratios may be utilized.

By utilizing the process and structures as described herein, theepitaxial profile of the source/drain regions may be stabilized. Assuch, degradation of Ion-Ioff and drain induced barrier lowering may beminimized. Such minimization can improve device uniformity and helpimprove wafer acceptance test results.

In an embodiment, a representative semiconductor device comprises: afirst fin and a second fin disposed over a source/drain region of asubstrate; a first epitaxial regrowth region over the first fin; asecond epitaxial regrowth region over the second fin, the secondepitaxial regrowth region contacting the first epitaxial regrowthregion; a dielectric layer over the first epitaxial regrowth region andthe second epitaxial regrowth region; and a void region in thedielectric layer, the void region disposed under an upper-most surfaceof the first epitaxial regrowth region and under an upper-most surfaceof the second epitaxial regrowth region. The void region may be disposedunder contacting portions of the first epitaxial regrowth region and thesecond epitaxial regrowth region. Contacting portions of the firstepitaxial regrowth region and the second epitaxial regrowth region maycomprise a boundary of the void region. The void region may adjoincontacting portions of the first epitaxial regrowth region and thesecond epitaxial regrowth region. The representative semiconductordevice may further comprise an isolation region interposed between thefirst fin and the second fin. The isolation region may have an uppersurface that is substantially planar, concave, or v-shaped. Thedielectric layer may encapsulate the first epitaxial regrowth region andthe second epitaxial regrowth region.

In another embodiment, a representative semiconductor device comprises:a plurality of fins disposed over a substrate; a plurality of isolationstructures interposed between respective pairs of the plurality of fins;a plurality of epitaxial regrowth structures each disposed overrespective ones of the plurality of fins, wherein each of the pluralityof epitaxial regrowth structures adjoins adjacent ones of the pluralityof epitaxial regrowth structures; a dielectric layer encapsulating theplurality of epitaxial regrowth structures; and a plurality of voidregions in the dielectric layer, each of the plurality of void regionslaterally interposed between respective pairs of the plurality ofepitaxial regrowth structures. Each of the plurality of void regions maybe disposed under contacting portions of respective adjacent pairs ofthe plurality of epitaxial regrowth structures. Contacting portions ofrespective adjacent pairs of the plurality of epitaxial regrowthstructures may comprise a boundary of each of the plurality of voidregions. Each of the plurality of void regions may adjoin contactingportions of respective adjacent pairs of the plurality of epitaxialregrowth structures. The representative semiconductor device may furthercomprise a plurality of isolation regions interposed between theplurality of fins. The plurality of isolation regions may have uppersurfaces that are substantially planar, concave, or v-shaped. Thedielectric layer may encapsulate the plurality of epitaxial regrowthstructures.

In yet another embodiment, a representative method for manufacturing asemiconductor device comprises steps of: forming a source/drain regionin a substrate; forming a plurality of fin structures over thesource/drain region; forming a plurality of isolation structureslaterally interposed between respective pairs of the plurality of finstructures; etching an upper portion of the plurality of fin structures;forming a plurality of epitaxial regrowth regions over respective onesof the plurality of fin structures, wherein each of the plurality ofepitaxial regrowth regions adjoins adjacent ones of the plurality ofepitaxial regrowth regions; and depositing a dielectric layer over andon the plurality of epitaxial regrowth regions, wherein a plurality ofvoid regions is formed in the dielectric layer, and each of theplurality of void regions is laterally interposed between respectivepairs of the plurality of fin structures. Etching the upper portion ofthe plurality of fin structures may further comprise etching theplurality of isolation structures. The plurality of void regions may bedisposed under contacting portions of adjoining adjacent epitaxialregrowth regions. Contacting portions of adjoining adjacent epitaxialregrowth regions may form a boundary of each of the plurality of voidregions. Each of the plurality of void regions may adjoin respectivecontacting portions of respective adjoining adjacent epitaxial regrowthregions. The representative method may further comprise a step offorming a plurality of isolation region interposed between respectivepairs of the plurality of fin structures, wherein the plurality ofisolation regions have upper surfaces that are substantially planar,concave, or v-shaped.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device, comprising: a first finand a second fin disposed over a source/drain region of a substrate; afirst epitaxial regrowth region over the first fin; a second epitaxialregrowth region over the second fin, the second epitaxial regrowthregion contacting the first epitaxial regrowth region; a dielectriclayer over the first epitaxial regrowth region and the second epitaxialregrowth region; and a void region in the dielectric layer, the voidregion disposed under an upper-most surface of the first epitaxialregrowth region and under an upper-most surface of the second epitaxialregrowth region.
 2. The semiconductor device of claim 1, wherein thevoid region is disposed under contacting portions of the first epitaxialregrowth region and the second epitaxial regrowth region.
 3. Thesemiconductor device of claim 2, wherein contacting portions of thefirst epitaxial regrowth region and the second epitaxial regrowth regioncomprise a boundary of the void region.
 4. The semiconductor device ofclaim 2, wherein the void region adjoins contacting portions of thefirst epitaxial regrowth region and the second epitaxial regrowthregion.
 5. The semiconductor device of claim 1, further comprising anisolation region interposed between the first fin and the second fin. 6.The semiconductor device of claim 5, wherein the isolation region has anupper surface that is substantially planar, concave, or v-shaped.
 7. Thesemiconductor device of claim 1, wherein the dielectric layerencapsulates the first epitaxial regrowth region and the secondepitaxial regrowth region.
 8. A semiconductor device, comprising: aplurality of fins disposed over a substrate; a plurality of isolationstructures interposed between respective pairs of the plurality of fins;a plurality of epitaxial regrowth structures each disposed overrespective ones of the plurality of fins, wherein each of the pluralityof epitaxial regrowth structures adjoins adjacent ones of the pluralityof epitaxial regrowth structures; a dielectric layer encapsulating theplurality of epitaxial regrowth structures; and a plurality of voidregions in the dielectric layer, each of the plurality of void regionslaterally interposed between respective pairs of the plurality ofepitaxial regrowth structures.
 9. The semiconductor device of claim 8,wherein each of the plurality of void regions is disposed undercontacting portions of respective adjacent pairs of the plurality ofepitaxial regrowth structures.
 10. The semiconductor device of claim 9,wherein contacting portions of respective adjacent pairs of theplurality of epitaxial regrowth structures comprise a boundary of eachof the plurality of void regions.
 11. The semiconductor device of claim9, wherein each of the plurality of void regions adjoins contactingportions of respective adjacent pairs of the plurality of epitaxialregrowth structures.
 12. The semiconductor device of claim 8, furthercomprising a plurality of isolation regions interposed between theplurality of fins.
 13. The semiconductor device of claim 12, wherein theplurality of isolation regions have upper surfaces that aresubstantially planar, concave, or v-shaped.
 14. The semiconductor deviceof claim 8, wherein the dielectric layer encapsulates the plurality ofepitaxial regrowth structures.
 15. A method comprising: forming asource/drain region in a substrate; forming a plurality of finstructures over the source/drain region; forming a plurality ofisolation structures laterally interposed between respective pairs ofthe plurality of fin structures; etching an upper portion of theplurality of fin structures; forming a plurality of epitaxial regrowthregions over respective ones of the plurality of fin structures, whereineach of the plurality of epitaxial regrowth regions adjoins adjacentones of the plurality of epitaxial regrowth regions; and depositing adielectric layer over and on the plurality of epitaxial regrowthregions, wherein a plurality of void regions is formed in the dielectriclayer, and each of the plurality of void regions is laterally interposedbetween respective pairs of the plurality of fin structures.
 16. Themethod of claim 15, wherein etching the upper portion of the pluralityof fin structures further comprises etching the plurality of isolationstructures.
 17. The method of claim 15, wherein the plurality of voidregions are disposed under contacting portions of adjoining adjacentepitaxial regrowth regions.
 18. The method of claim 17, whereincontacting portions of adjoining adjacent epitaxial regrowth regionsform a boundary of each of the plurality of void regions.
 19. The methodof claim 17, wherein each of the plurality of void regions adjoinsrespective contacting portions of respective adjoining adjacentepitaxial regrowth regions.
 20. The method of claim 15, furthercomprising forming a plurality of isolation region interposed betweenrespective pairs of the plurality of fin structures, wherein theplurality of isolation regions have upper surfaces that aresubstantially planar, concave, or v-shaped.